Thiết kế VLSI - Bài 3 (HUST) Thầy Nguyễn Vũ Thắng

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goupee.vn goupee.com Design and Implementation of VLSI Systems Lecture03 CMOS fabrication cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnLecture 03: CMOS fabrication goupee.com http://www.appliedmaterials.com/HTMAC/animated.html cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnFabricating one transistor goupee.com UV light Mask oxygen exposed Silicon dioxide photoresist photoresist oxide Silicon substrate Oxidation Photoresist Mask-Wafer Exposed Photoresist (Field oxide) Coating Alignment and Exposure Photoresist Develop Dopant gas Ionized CCl gas Ionized oxygen gas 4 Ionized CF4 gas Silane gas photoresist oxygen oxide oxide oxide polysilicon gate oxide Oxide Photoresist Oxidation Polysilicon Polysilicon Etch Remove (Gate oxide) Deposition Mask and Etch Scanning ion beam Contact Metal silicon nitride holes contacts G cuu duong than cong . comtop nitride drain ox G G G G S D S D S D S D S D Ion Active Nitride Contact Metal Implantation Regions Deposition Etch Deposition and Etch fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnTop view goupee.com cuu duong than cong . comSource Gate Drain Polysilicon Source Gate Drain SiO Polysilicon 2 SiO2 p+ p+ n+ n+ n bulk Si p bulk Si fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnWafer preparation goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnStart with P substrate goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn1. Spin Resist Coating goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn2. Expose N Well Mask goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn3. Develop resist goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn4. Implant N Well goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn5. Remove Resist goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnAnneal wafer to diffuses N well (heal lattice)goupee.com and grow new oxide layer cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnRemove oxide from anneal goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn1. Spin Resist goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn2. Expose resist with active diffusion maskgoupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn3. Develop resist goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn4. Grow oxide on exposed surface goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn5. Strip resist goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vnGrown thin oxide over silicon surfaces goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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goupee.vn1. Deposit poly using Chemical Vapor goupee.com Deposition (CVD) cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt

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