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goupee.vn goupee.com Design and Implementation of VLSI Systems Lecture05 Delay cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vn goupee.com Design and Implementation of VLSI Systems Lecture05 Delay cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay goupee.com • Introduction • Delay Estimation • Logical Effort for Delay Estimation cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnIntroduction goupee.com • Critical paths are those which require attention to timing details • Timing analyzer is a design tool that automatically finds the slowest path in a logic design – Altera: Classic Timing Analyzer, TimeQuest Timing Analyzer – Synopsys: PrimeTime • The critical paths can be affected at four main levels – The architecture/ micro-architecture level – The logic levelcuu duong than cong . com – The circuit level – The layout level fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • tpdr: rising propagation delay – Max time: From input to rising output crossing VDD/2 • tpdf: falling propagation delay – Max time: From input to falling output crossing VDD/2 • tpd: average propagation delay. tpd = (tpdr + tpdf)/2 • tcdr: rising contamination (best-case) delay – Min time: From input to rising output crossing VDD/2 • tcdf: falling contamination (best-case) delay – Min time: From input to falling output crossing VDD/2 • tcd: average contamination delay. tcd = (tcdr + tcdf)/2 • tr: rise time - from output crossing 0.2 VDD to 0.8 VDDcuu duong than cong . com • tf: fall time - from output crossing 0.8 VDD to 0.2 VDD fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • Driver: gate that charges or discharges a node • Load: gates and wire being driven • Delay: propagation delay • Timing analyzer: computes the arrival times, i.e., the latest time at which each node in a block of logic will switch. • The nodes: inputs, outputs, and internal nodes. • The arrival time ai at internal node i depends on the propagation delay of the gate driving i and the arrival times of the inputs to the gate: cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • The timing analyzer computes the arrival times at each node and checks that the outputs arrive by their required time. • The slack is the difference between the required and arrival times. • Positive slack means that the circuit meets timing. • Negative slack means that the circuit is not fast enough. • Figure 4.2 shows nodes annotated with arrival times. If the outputs are all required at 200 ps, the circuit has 60 ps of slack. cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • There are a number of critical paths that limit the operating speed of the system and require attention to timing details. • The critical paths can be affected at four main levels: – The architectural/micro architectural level – The logic level – The circuit level – The layout level cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • The most important: architecture or microarchitecture level • Requires a broad knowledge on: – Algorithms that implement the function – Target technology: gate delays, how fast memories are accessed, how long signals take to propagate along a wire… • Trade-offs at the micro architectural level include the number of pipeline stages, the number of execution units (parallelism), and the size of memories. cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • Logic level: the transformation from function to gates and registers can be done by experience, by experimentation, or, most often, by logic synthesis. • Trade-offs include: – Types of functional blocks (e.g., ripple carry vs. look ahead adders) – Number of stages of gates in the clock cycle – Fan-in and fan-out of the gates. cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • Circuit level: by choosing transistor sizes or using other styles of CMOS logic. • Layout level: – Floor plan (either manually or automatically generated) determines the wire lengths that can dominate delay. – Good cell layouts can also reduce parasitic capacitance cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnDelay definitions goupee.com • This chapter: logic and circuit optimizations • Select number of stages of logic, the types of gates, and the transistor sizes. • Examining the transient response of an inverter: use simple models that offer the designer more intuition – RC • Method of Logical Effort simplifies the model even further and is a powerful way to evaluate delay in circuits. • Other delay models used for timing analysis. cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnHow to calculate delay goupee.com • Time consuming • Not very useful for designers in evaluating different options and optimizing different parameters • We need a simple way to estimate delay for “what if” scenarios. • Fidelity vs. accuracy cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnTransistor resistance goupee.com • In the linear region • Not accurate, but at least shows that the resistance is proportional to L/W and decreases with Vgs cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnSwitch level RC models goupee.com • An nMOS transistor with width of one unit is defined to have effective resistance R. • The resistance of a pMOS transistor = 2-3× resistance of nMOS transistor of the same size due to the pMOS mobility. • Wider transistors have lower resistance => a pMOS transistor of double-unit width has effective resistance R. • R typically around 10K in this course • Long-channel model: current decreases linearly with channel length • However, if a transistor is fully velocity-saturated, current and resistance become independent of channel length. • Real transistors operate somewhere between these two extremes.cuu duong than cong . com • => neglect velocity saturation fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnSwitch level RC models goupee.com • Each transistor has gate and diffusion capacitance. • Define C to be the gate capacitance of a unit transistor. A transistor of k times unit width has capacitance kC. • Assume the contacted source or drain of a unit transistor to also have capacitance of about C. • Wider transistors have proportionally greater diffusion capacitance. • Increasing channel length increases gate capacitance proportionally but does not affect diffusion capacitance. • Use a single average value for capacitances. • Roughly estimate C for a minimum length transistor to be 1 fF/um of width. cuu duong than cong . com • In a 65 nm process with a unit transistor being 0.1 um wide, C is thus about 0.1 fF fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnSwitch level RC models goupee.com • Figure: equivalent RC circuit models for nMOS and pMOS transis- tors of width k with contacted diffusion on both source and drain • A transistor of k unit width has kC capacitance and R/k resistance cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnSwitch level RC models goupee.com cuu duong than cong . com Draw equivalent circuit for the inverter fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnCalculate K goupee.com cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
goupee.vnExample: 3-input NAND gate goupee.com • Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R). cuu duong than cong . com fb.com/goupee.vn CuuDuongThanCong.com https://fb.com/tailieudientucntt
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